AOC2403 20v p-channel mosfet general description product summary vds -20v i d (at v gs =-4.5v) -1.8a r ds(on) (at v gs =-4.5v) < 95m w r ds(on) (at v gs =-2.5v) < 115m w r ds(on) (at v gs =-1.8v) < 150m w r ds(on) (at v gs =-1.5v) < 200m w the AOC2403 uses advanced trench technology to prov ide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.5v while retaining a 8v v gs(max) rating. equivalent circuit top view bottom view mcsp 0.97x0.97_4 symbol v ds v gs t a =25c i d i dm p d t j , t stg note 1. mounted on minimum pad pcb note 2. pw <300 s pulses, duty cycle 0.5% max power dissipation note1 t a =25c c -20 a 0.45 -55 to 150 -20 w source current (pulse) note2 junction and storage temperature range maximum -1.8 vv gate-source voltage drain-source voltage source current (dc) note1 units parameter absolute maximum ratings t a =25c unless otherwise noted 8 g equivalent circuit s d top view bottom view pin1(g) g ds 1 2 3 4 s rev 0 : july 2012 www.aosmd.com page 1 of 5
AOC2403 symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 100 na v gs(th) -0.3 -0.65 -1 v 76 95 t j =125c 105 132 91 115 107 150 130 200 g fs 7 s v fsd -0.73 -1 v c iss 405 pf c oss 75 pf c rss 45 pf r g 26 w q g 4.8 nc q gs 0.8 nc q gd 1 nc t d(on) 7.5 t r 8.5 t d(off) 95 t 30 turn-off fall time input capacitance output capacitance turn-on delaytime turn-on rise time turn-off delaytime reverse transfer capacitance gate resistance v gs =-4.5v, v ds =-10v, r l =10 w, id=-1a, r gen =6 w v gs =0v, v ds =-10v, f=1mhz, m w electrical characteristics (t j =25c unless otherwise noted) switching parameters v gs =0v, v ds =0v, f=1mhz zero gate voltage source current gate leakage current forward transconductance r ds(on) v ds =v gs, i d =-250 m a v ds =-20v, v gs =0v v ds =0v, v gs =8v source-source breakdown voltage i d =-250 m a, v gs =0v i dss m a static parameters parameter conditions v gs =-4.5v, i d =-1a static source to source on-resistance gate threshold voltage v gs =-1.5v, i d =-0.5a v gs =-2.5v, i d =-1a v gs =-1.8v, i d =-0.5a i d =-1a,v gs =0v, v ds =-5v, i d =-1a dynamic parameters diode forward voltage ns v gs =-4.5v, v ds =-10v, id=-1a total gate charge gate source charge gate drain charge rev 0 : july 2012 www.aosmd.com page 2 of 5 t f 30 t rr 22 ns q rr 8.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery charge i f =-1a, di/dt=100a/ m s turn-off fall time body diode reverse recovery time i f =-1a, di/dt=100a/ m s rev 0 : july 2012 www.aosmd.com page 2 of 5
AOC2403 typical electrical and thermal characteristics 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-1.5v -1.8v -7v - 4.5v -10v 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics 50 75 100 125 150 175 200 0 2 4 6 8 10 r ds(on) (m w ww w ) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance v gs =-1.8v i d =-0.5a v gs =-4.5v i d =-1a 25 c 125 c v ds =-5v v gs =-1.5v v gs =-4.5v v gs =-2.5v v gs =-1.8v v gs =-2.5v i d =-1a v gs =-1.5v i d =-0.5a rev 0 : july 2012 www.aosmd.com page 3 of 5 50 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 50 75 100 125 150 175 200 0 2 4 6 8 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-1a 25 c 125 c rev 0 : july 2012 www.aosmd.com page 3 of 5
AOC2403 typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 5 6 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 10 20 30 40 50 power (w) c oss c rss v ds =-10v i d =-1a t j(max) =150 c t a =25 c 0.1 1.0 10.0 100.0 -i d (amps) 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 100ms 10s 1s rev 0 : july 2012 www.aosmd.com page 4 of 5 0 10 0.001 0.01 0.1 1 10 100 1000 10000 pulse width (s) figure 10: single pulse power rating junction-to- ambient 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance single pulse d=t on /(t on +t) t j,pk =t a +p d .z q ja .r q ja r q ja =155 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.0 0.1 0.01 0.1 1 10 100 -v ds (volts) figure 9: maximum forward biased safe operating area dc t j(max) =150 c t c =25 c 10s 1s rev 0 : july 2012 www.aosmd.com page 4 of 5
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